ট্রানজিস্টর: সংশোধিত সংস্করণের মধ্যে পার্থক্য

** [[ইনসুলেটেড-গেট বাইপোলার ট্রানজিস্টর]]s (IGBTs) use a medium-power IGFET, similarly connected to a power BJT, to give a high input impedance. Power diodes are often connected between certain terminals depending on specific use. IGBTs are particularly suitable for heavy-duty industrial applications. The [[Asea Brown Boveri]] (ABB) ''5SNA2400E170100'' illustrates just how far power semiconductor technology has advanced.<ref>{{citeওয়েব webউদ্ধৃতি|url=http://library.abb.com/GLOBAL/SCOT/scot256.nsf/VerityDisplay/E700072B04381DD9C12571FF002D2CFE/$File/5SNA%202400E170100_5SYA1555-03Oct%2006.pdf |title=IGBT Module 5SNA 2400E170100 |format=PDF |accessdate=June 30, 2012}}</ref> Intended for three-phase power supplies, this device houses three n–p–n IGBTs in a case measuring 38 by 140 by 190&nbsp;mm and weighing 1.5&nbsp;kg. Each IGBT is rated at 1,700 volts and can handle 2,400 amperes;

* [[সিঙ্গেল-ইলেক্ট্রন ট্রানজিস্টর]]s (SET), consist of a gate island between two tunneling junctions. The tunneling current is controlled by a voltage applied to the gate through a capacitor.<ref>{{citeওয়েব webউদ্ধৃতি|url=http://snow.stanford.edu/~shimbo/set.html |title=Single Electron Transistors |publisher=Snow.stanford.edu |accessdate=June 30, 2012}}</ref>

* [[ন্যানোফ্লুইডিক ট্রানজিস্টর]], controls the movement of ions through sub-microscopic, water-filled channels.<ref>{{citeওয়েব webউদ্ধৃতি|last=Sanders |first=Robert |url=http://www.berkeley.edu/news/media/releases/2005/06/28_transistor.shtml |title=Nanofluidic transistor, the basis of future chemical processors |publisher=Berkeley.edu |date=June 28, 2005 |accessdate=June 30, 2012}}</ref>

* [[ভ্যাকুয়াম-চ্যানেল ট্রানজিস্টর]], when in 2012, NASA and the National Nanofab Center in South Korea were reported to have built a prototype vacuum-channel transistor in only 150 nanometers in size, can be manufactured cheaply using standard silicon semiconductor processing, can operate at high speeds even in hostile environments, and could consume just as much power as a standard transistor.<ref>{{citeওয়েব webউদ্ধৃতি|url=http://www.gizmag.com/nasa-vacuum-channel-transistor/22626/ |title=The return of the vacuum tube? |publisher=Gizmag.com |date=May 28, 2012 |accessdate=May 1, 2016}}</ref>